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Structural, optical and electrical properties of thermal evaporated nano sized In2Te3 thin films

  • R Revathi Department of Physics, DR .N .G .P Arts and Science College, Coimbatore-641048, Tamil Nadu, India
  • R Karunathan Department of Physics, DR .N .G .P Arts and Science College, Coimbatore-641048, Tamil Nadu, India

Abstract

Indium Telluride thin films were prepared by thermal evaporation technique. Films were annealed at 573K under vacuum for an hour. Both as-deposited and annealed films were used for characterization. The structural parameters were discussed on the basis of annealing effect for a film of thickness 1500 Å. Optical analysis was carried out on films of different thicknesses for both as - deposited and annealed samples. Both the as- deposited and annealed films exhibit direct and allowed transition. Electrical resistivity measurements were made in the temperature range of 303-473 K using Four-probe method. The calculated resistivity value is of the order of 10-6 ohm meter. The activation energy value decreases with increasing film thickness. The negative temperature coefficient indicates the semiconducting nature of the film.

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